Ultralow-power GaAs MESFET MSI circuits using two-phase dynamic FET logic
نویسندگان
چکیده
Two-phase dynamic FET !ogic (TDFL) gates are used in GaAs MESFET MSI circuits to implement very low power 4-b ripple carry adders and a variable modulus (2 to 31) prescaler. Operation of the adders is demonstrated at 500 MHz with an associated power dissipation of less than 1.0 mW and at 750 MHz with p d = 1.7 mW. The prescaler, which contains 166 TDFL gates and 79 static gates, i s shown to operate up to 850 MHz with an associated power dissipation of 9.2 mW from its 1.0-V supply. The operation of the adders and prescalers demonstrates the use of threeand four-input TDFL gates and a completely dynamic TDFL XNOR gate. The TDFL gates in these circuits dissipate only from 14 to 20 nW/MHz.
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